| PART |
Description |
Maker |
| BUL62A |
Regulated Output Power; 1.6kVDC Isolation; Over Current and Over Voltage Protection; Six-Sided Shield; No Derating to 63C; Standard 2 x 1 Package
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| FJP3305H1 FJP3305H1TU FJP3305H2 FJP3305H2TU |
High Voltage Fast-Switching NPN Power Transistor
High Voltage Capability
|
Fairchild Semiconductor
|
| BFN37 BFN39 Q62702-F1305 Q62702-F1304 |
From old datasheet system
PNP Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| BFN20 Q62702-F1058 |
NPN Silicon High-Voltage Transistor (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| Q62702-F1306 BF720 BF722 Q62702-F1238 |
NPN Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) NPN硅高压晶体管在电视机的视频输出级（适合开关电源和高击穿电压）
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| APT10026L2LL_03 APT10026L2LL APT10026L2LL03 APT100 |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
38 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET TO-264MAX, 3 PIN
|
Microsemi Corporation
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| SML20W65 SML20B56 |
HIGH POWER TERMINATION 56 A, 200 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
TT electronics Semelab, Ltd.
Seme LAB
|
| 2SA1776 2SA1727 2SA1812 A5800343 2SA18121 |
High-voltage Switching Transistor (Telephone power supply)
High-voltage Switching Transistor (Telephone power supply) (-400V/ -0.5A)
High-voltage Switching Transistor (Telephone power supply) (-400V, -0.5A)
High-voltage Switching Transistor (Telephone power supply) (-400V -0.5A)
From old datasheet system
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
High-voltage Switching Transistor ( 400V, 0.5A)
|
ROHM[Rohm]
|
| IRFP151 IRFP153 IRFP152 IRF150 IRF152 IRFP150 IRFC |
(IRFP150 - IRFP153) HIGH VOLTAGE POWER MOSFET DIE
(IRF150 - IRF153) HIGH VOLTAGE POWER MOSFET DIE
|
International Rectifier
IXYS[IXYS Corporation]
|
| ADM6710AARJZ-REEL7 ADM6710HARJZ-REEL7 ADM6710CARJZ |
Low Voltage, High Accuracy, Quad Voltage UP Supervisory Circuit 1-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO6
Low Voltage, High Accuracy, Quad Voltage UP Supervisory Circuit 低电压，高精度，四路电压监控电路
|
Analog Devices, Inc.
Infineon Technologies AG
|
| IRS26072DSPBF |
The IRS26072D is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.
|
International Rectifier
|
